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Conferences > OFC > 2023 > Th2A > Th2A.6

Temperature-Insensitive pulse and 120℃ CW Operation of 1550nm-Band p-doped InAs/InGaAlAs Quantum Dot Lasers on InP(311)B Substrate

Ryota Yabuki, Atsushi Matsumoto, Ryumi Katsuhara, Siim Heinsalu, Koichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, and Katsuyuki Utaka

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Abstract

We fabricated 1550nm-band, p-doped, InAs/InGaAlAs quantum-dot (QD) lasers on an InP(311)B substrate. The device showed extremely high temperature stability and lasing up to 120℃ was confirmed under CW condition.

© 2023 The Author(s)

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