Abstract

We experimentally demonstrate the first all-optical Content Addressable Memory (CAM) cell, employing a monolithically integrated InP Flip-Flop and a SOA-MZI XOR gate. Error-free operation during Write operation and Content Addressing is achieved at 10 Gb/s.

© 2016 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription