Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > OFC > 1992 > PD > PD4

InGaAsP/InGaAsP Multiple Quantum Well modulator with improved saturation intensity and bandwidth over 20 GHz

F. Devaux, E. Bigan, A. Ougazzaden, B. Pierre, F. Huet, M. Carré, and A. Carenco

Not Accessible

Your library or personal account may give you access

Abstract

A very efficient Multiple Quantum Well modulator is fabricated from InGaAsP/InGaAsP layers grown by AP-MOCVD. It exhibits at 1.54 μm a 17 dB extinction ratio for a 3 V drive voltage, a 2.7 dB on-state loss and a bandwidth over 20 GHz with 1-2 mW of coupled optical power.

© 1992 Optical Society of America

PDF Article
More Like This
3.0-mm diameter InGaAsP multiple quantum well ring laser actively mode-locked at 9.0 GHz

G. Raybon, P. B. Hansen, M.-D. Chien, U. Koren, B. I. Miller, M G. Young, J.-M. Verdiell, and C. A. Burrus
WC2 Integrated Photonics Research (IPR) 1992

High speed InGaAs/InAlAs multiple qoantnin well optical modulators with bandwidths in excess of 40 GHz at 1.55 μm

KOICHI WAKITA, ISAMU KOTAKA, OSAMU MITOMI, HIROMITSU ASAI, YUICHI KAWAMURA, and MITSURU NAGANUMA
CTUC6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990

Theoretical Prediction and Experimental Verification of Quantum Well Electroabsorption Modulators with Bandwidths Exceeding 40 GHz

M. N. Khan, G. E. Shtengel, S. Chandrasekhar, E. C. Burrows, C. A. Burrus, J. Sarathy, J. A. Grenko, J. M. Vandenberg, S. K. Sputz, M. Geva, and R. W. Glew
ThT4 Optical Fiber Communication Conference (OFC) 1999

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use