Abstract

Heterostructures in lattice mismatched systems have been of great interest for optoelectronic integrated circuits (OEICs), since well established technologies for each material can be used. A GaAs-on-InP or InP-on-GaAs system seems attractive in OEICs for communication systems, because the light sources and electronic components can be made with InP and GaAs materials, respectively. Although OEICs on a GaAs-on-InP heterostructure have been reported,¹ only pulsed operation of InGaAsP lasers in an InP-on- GaAs system, where mature IC technologies can be applied directly to GaAs substrates, has been reported.² For cost sensitive OEICs, the InP-on-GaAs system with a large diameter GaAs substrate seems more suitable compared with the GaAs-on-InP system with an InP substrate.

© 1990 Optical Society of America