Abstract

High-speed semiconductor lasers are of interest for high-bit-rate digital and analog communication systems. We have investigated theoretically and experimentally the effects of parasitics, cavity length, transverse structure, temperature, and duty cycle on the bandwidth of InGaAsP lasers. As a result of this investigation, we have increased the bandwidth of cw semiconductor lasers from the 8-15-GHz range1-4 to a record cw bandwidth of 26.5 GHz in a constricted-mesa laser at −60°C.

© 1986 Optical Society of America

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