Abstract
Amorphous bit marked in active layer of phase-change optical disk must be crystalized in very short time and be stable at room temperature. We have made clear the crystalization mechanism of Ge2Sb2Te5, which was well known as phase-change recording material, through the isothermal anneal tests and observation of the crystalization behavior of recorded bit by transmission electron micrograph. (VTR-TEM)
© 1991 Optical Society of America
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