ESQW modulator and ESQW SEED using asymmetric Fabry-Perot structures

Y. W. Choi; O.K. Kwon; S.H. Lee; S. Shim; Y.H. Won; E.H. Lee

doi:10.1364/OAM.1993.MUU.3

OSA Annual Meeting
Technical Digest Series (Optica Publishing Group, 1993),
paper MUU.3
•https://doi.org/10.1364/OAM.1993.MUU.3

ESQW modulator and ESQW SEED using asymmetric Fabry-Perot structures

Y. W. Choi, O.K. Kwon, S.H. Lee, S. Shim, Y.H. Won, and E.H. Lee

OSA Annual Meeting 1993

Toronto Canada
3–8 October 1993
ISBN:

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Quantum-Well Devices and Applications (MUU)

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Y. W. Choi, O. K. Kwon, S. H. Lee, S. Shim, Y. H. Won, and E. H. Lee, "ESQW modulator and ESQW SEED using asymmetric Fabry-Perot structures," in OSA Annual Meeting, Technical Digest Series (Optica Publishing Group, 1993), paper MUU.3.

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Abstract

In recent years, there has been much interest in the extremely shallow quantum well (ESQW, x ≤ 0.04 in Al_xGa_1–x As barriers) structure^1,2 for use in opto-electronic devices such as self electro-optic effect device (SEED).

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