Abstract

The ability to enhance optical nonlinearities associated with the photogeneration of free carriers can be accomplished with carrier multiplication. The gain mechanism provided by carrier multiplication is inherently feasible in avalanche photodiodes. We present results from optical bistability experiments performed on silicon avalanche photodiodes under reverse bias conditions in the case of thermal nonlinearities (Joule heating) and electronic nonlinearities (free carrier plasma effects). The reflected intensity versus the operating voltage is measured at the input intensity of the diode, as is also the output photocurrent versus operating voltage; in both instances, the reflected signal or photocurrent are multivalued functions of the operating voltage. We label such a device as an avalanche-enhanced self-electro-optic-effect device or A-SEED.

© 1992 Optical Society of America