Abstract

We are investigating triple quantum-well (TQW) structures, in which carrier generation occurs in the central well and charge transfer occurs to the wells on either side of the central well. These structures should provide greater flexibility than coupled double-well structures for the control of charge transfer between the wells. Using effective mass and tight-binding models, we have designed TQW GaAs/AlGaAS structures to have a simultaneous resonance such that resonant electron transfer occurs to one side well and resonant hole transfer occurs to the other side well at the same bias. We have grown by MBE TQW structures designed to have a simultaneous electron-hole resonance and, for comparison, samples with only an electron resonance and others with only a hole resonance. The resonances have been identified by photocurrent spectroscopy. The dynamics of carrier recombination and charge transfer have been investigated by time-resolved photoluminescence and will be described.

© 1992 Optical Society of America