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Measurement and theory of nondegenerate bound electronic nonlinearities in semiconductors

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Abstract

We recently obtained the dispersion and band-gap scaling of the bound electronic Kerr effect (n2) from a nonlinear Kramers-Kronig transformation of the nondegenerate nonlinear absorption spectrum calculated including the AC Stark, electronic Raman, and two-photon absorption effect.1 The results for the degenerate case gave excellent agreement with the experimental results of semiconductors as well as large gap dielectrics.2 We have extended this formalism to obtain a general expression for the nondegenerate n21; ω2) and 2PA coefficient β(ω1; ω2). This allows us to calculated the change of refractive index (Δn) and absorption (Δα) at a probing frequency ω1, due to the presence of a pump beam at ω2 < ωg. Experiments were performed using a excite-probe (two-color) Z-scan technique.2,3 Picosecond pulses from a mode-locked Nd:YAG laser at λ2 = 1.06 μm were used as the pump beam while the second harmonic of these pulses at λ1 = 0.532 μm probed the induced nonlinearities in two-color Z-scan geometry. Here the pump beam induces a Kerr lens in the sample, which changes the transmittance of the probe beam as transmitted through an aperture in the far field. This change is a strong function Z position (along the propagation distance) of the sample.

© 1991 Optical Society of America

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