Abstract

Photoluminescence-excitation spectroscopy was performed on a series of wide-gap ZnSe/ZnS single-quantum-well-structure samples grown by molecular-beam epitaxy (MBE) to study quantum confinement effects. Both tunable cw and nanosecond pulsed light sources were used. Single sharp photoluminescence peaks were observed in the range of 2.9-3.2 eV. The half widths of these photoluminescence peaks were much smaller than those reported in samples grown by low-pressure, metal-organic chemicalvapor deposition. This reflects the high quality of these MBE samples. As expected, the photoluminescence peak position increases with decreasing ZnSe well widths. A group of peaks and bumps observed in the photoluminescence excitation spectra will be compared with theoretically calculated energies associated with light-hole and heavy-hole transitions. Experimental data taken from the bulk ZnSe and from MBE ZnSe grown on GaAs substrate will also be presented for comparison.

© 1990 Optical Society of America