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Analysis of ballistic electron transport in semiconductor quantum-well waveguides

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Abstract

The wave nature of ballistic (collisionless) electrons in semiconductor quantum wells is treated. Reflection of an electron from a single potential barrier is analyzed as a function of the electron's incident angle and kinetic energy. Results include critical angle for total reflection, wave-function phase shift on reflection, and lateral (Goos–Hanchen) shift parallel to the barrier on reflection.

© 1990 Optical Society of America

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