Electronic and optoelectronic properties of 1.3-μm Schottky barrier LED arrays

Eric Y. Chan; R. J. Fu; A. Burnett; C. S. Hong

doi:10.1364/OAM.1988.THGG6

Annual Meeting Optical Society of America
Technical Digest Series (Optica Publishing Group, 1988),
paper THGG6
•https://doi.org/10.1364/OAM.1988.THGG6

Electronic and optoelectronic properties of 1.3-μm Schottky barrier LED arrays

Eric Y. Chan, R. J. Fu, A. Burnett, and C. S. Hong

OSA Annual Meeting 1988

Santa Clara, California United States
30 October–4 November 1988
ISBN:

From the session
Joint Symposium on Diode Laser Arrays: 4 (THGG)

Open Access

Get PDF
Email
Share
Get Citation
Copy Citation Text
E. Y. Chan, R. J. Fu, A. Burnett, and C. S. Hong, "Electronic and optoelectronic properties of 1.3-μm Schottky barrier LED arrays," in Annual Meeting Optical Society of America, Technical Digest Series (Optica Publishing Group, 1988), paper THGG6.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

Schottky barrier confined 1.3-μm LED arrays have been successfully fabricated. These arrays show excellent l–V characteristics and linear L–l relationship. The spectral output of the array centers being about 1.31 μm, good uniformity in these arrays is also obtained.

PDF Article

More Like This

Schottky barrier infrared focal plane arrays

MICHAEL J. McNUTT
CTHH3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990

1.3 µm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetector

Necmi Biyikli, Ibrahim Kimukin, Ekmel Ozbay, and Gary Tuttle
CWR2 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

High-density Schottky barrier IRCCD sensors for remote-sensing applications

H. Elabd, J. R. Tower, and B. M. Mccarthy
THK1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1983

Previous Article Next Article