Abstract

This paper describes the performance of high-power GaAIAs laser diodes (LDs) constructed by (1) Spectra Diode Laboratories (SDL) with multiple stripes containing single and multiple quantum wells and (2) McDonnell Douglas Astronautics Co., Optoelectronics Center (MDAC/OEC) with a single broad stripe containing a single quantum well. The LDs are fabricated using metalorganlc chemical vapor deposition (MOCVD) technology and are mounted in TO-3 cans, TO-18 cans, C-packages, or LCB-packages. All SDL and mix MDAC/OEC LDs had coated cavity mirrors. The characteristics described include (1) optical power vs current for LDs operating at rated power, four times rated power, and catastrophic power levels (SDL 2 and 3.4 W, MDAC/OEC 1–5 W), (2) efficiency vs optical power (SDL 13–40%, MDAC/OEC 25–50%), (3) cavity filamentatlon, beam steering, and divergence changes after LD turn-on and with increasing optical power as observed using near- or far- fleld LD beam intensity distribution, (4) changes in beam divergence as observed by monitoring changes in fiber-optic transmission, (5) changes in SDL-LD output power and efficiency due to aging and to thermal degradation, where aging is caused by operating at elevated optical power, and thermal degradation is caused by operating at different shot time intervals when LDs are fin- or thermoelectric-cooled heat sink.

© 1988 Optical Society of America