Abstract

Semiconductor laser arrays are attractive as high-power optical sources. However, a systematic design of arrays capable of near-fundamental-mode operation in high-power cw conditions has not yet been reported. In this work we present such a design based on the results of a self-consistent numerical model.¹ A previous study of index-guided arrays operating near threshold ² has suggested the use of modified outer guide widths to achieve a fundamental lateral mode characterized by near-uniform guide intensities. In the present study we used our numerical model to investigate further the performance of this concept in the high-power regime. Because of the sizable index profile contribution arising from thermal effects, we find that modification of only the outer guides is insufficient to insure a near-uniform fundamental mode envelope. Instead, we propose to increase the width of each guide progressively from the device center so as to compensate approximately for the decreasing index of refraction due to thermal effects.

© 1988 Optical Society of America