Abstract
Enhanced coupling of spontaneous emission into a single (lasing) mode in a semiconductor microcavity is expected to feature interesting new physics, such as an ultra-low threshold laser[1], lasing without inversion[2] and intensity squeezing at below the oscillation threshold[3]. Cavity QED effects which have been observed in various atomic systems, however, are not readily observed in semiconductor systems due to a very fast dipole dephasing time and broad, emission linewidth. Only exception is an excitonic emission at cryogenic temperatures. The spontaneous radiation pattern and lifetime were modified by monolithic semiconductor microcavities[4].
© 1992 Optical Society of America
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