Abstract

Semiconductors typically have very large nonlinear coefficients, e.g. GaAs in the near-infrared has a second-order susceptibility coefficient around 40 times greater than conventional birefringent phase-matched crystals and about 5 times greater than the appropriate coefficient in quasi-phase-matched LiNbO₃. Semiconductors also possess a transparency range which extends into the mid-infrared, a mature fabrication technology, and have the potential to be integrated with diode laser pump sources. However, cubic semi-conductors do not possess any intrinsic birefringence. To implement quasi-phase-matching the nonlinear coefficient must be controllable. It has been established that this can be accomplished with quantum well growth and selective area disordering.¹,²

© 1998 Optical Society of America