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Asymmetric Twin-section Semiconductor Laser Structures for Broad-band Phase Conjugation

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Abstract

Multiwave mixing in above-threshold semiconductor laser structures can be utilised to generate phase conjugate signals in both reflection and transmission modes. The present paper demonstrates that asymmetric twin-section laser diodes can be configured to yield enhanced broad band phase conjugation. The phase conjugate reflectivities of the structures may be used to narrow the linewidth of laser diodes. Their phase conjugate transmission properties may be exploited for four-wave mixing cancellation in multichannel optical fibre systems.

© 1995 Optical Society of America

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