Formation of Submicrometer Carbonaceous Islands During SEM Examination of Thin GaAs Layers on Si Substrates

G.W. Turner; P.M. Nitishin

doi:10.1364/MSBIP.1991.WC8

Microphysics of Surfaces: Beam-Induced Processes
Technical Digest Series (Optica Publishing Group, 1991),
paper WC8
•https://doi.org/10.1364/MSBIP.1991.WC8

Formation of Submicrometer Carbonaceous Islands During SEM Examination of Thin GaAs Layers on Si Substrates

G.W. Turner and P.M. Nitishin

The Microphysics of Surfaces: Beam-Induced Processes 1991

Santa Fe, New Mexico United States
11–13 February 1991
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G. W. Turner and P. M. Nitishin, "Formation of Submicrometer Carbonaceous Islands During SEM Examination of Thin GaAs Layers on Si Substrates," in Microphysics of Surfaces: Beam-Induced Processes, Technical Digest Series (Optica Publishing Group, 1991), paper WC8.

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Abstract

Carbonaceous islands with controllable diameters up to ~ 2500 Å have been formed during SEM examination of very thin GaAs layers deposited by molecular beam epitaxy on Si substrates.

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