Abstract

Laser-induced chemical reaction of semiconductor with halogen and halogen compounds has attracted much attention in recent years due to its potential application in fabrication of microelectronic devices. We have reported UV and visible laser-induced reactions of Si and GaAs surfaces with chlorine using a CW molecular beam technique coupled with time-resolved mass spectrometry(1,2,). This paper will present recent studies in our laboratory on laser-induced reactions of Ge(111), Si(111), GaAs(100) and lnP(100) surfaces with chlorine molecules under 355-, 560-, and 1064-nm laser irradiations. We are particularly interested in the use of near infrared (1064-nm) laser photons as well as the promotion of reaction by raising the incident chlorine molecules’ translational energy. The objective is to achieve a better understanding of the mechanism of laser-induced reaction and its potential application in the chemical etching of semiconductor.

© 1991 Optical Society of America