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Conferences > MSBIP > 1991 > MC > MC4

Photoemission from Si(111) Surfaces Covered with Thick Overlayers of CaF2

B. Quiniou, W. Schwarz, Z. Wu, R.M. Osgood, Q. Yang, and J. Phillips

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Abstract

Recently, photoemitted electrons have been considered as a possible source of light-initiated surface reactions1. In particular, for example, the photon energy, 6.4 eV, from an ArF laser, is known to exceed the work function of many materials used in laser processing, such as Si, GaAs, and Cu. In fact, space-charge limited photoemission has been reported by several groups doing illumination of surfaces of these materials2.

© 1991 Optical Society of America

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