Abstract

The inherent theoretical advantages of GaAs electronic devices over those employing Si technology are severely limited in practice by the difficulty of forming passivating oxide layers. ¹ Problems encountered with oxide stoichiometry, crystallinity, interface defects, and chemical stability have been the subjects of numerous studies over the last 15 years. ^2-8 One of the major factors contributing to these problems is the differing rates of oxidation of Ga and As and the volatility of the AS₂O₃ and AS₂O₅ products at temperatures above ~100 °C.

© 1991 Optical Society of America