Abstract

In chemical vapor deposition, surface migration of adsorbed species is an important factor which limit the minimum crystal growth temperature, since high substrate temperature enhances the surface migration of the adsorbate. But, high temperature process produces defects in the crystal. Concerning this problem, photoepitaxy was proposed by the author in 1961 (1). It has been applied to Si (2) and GaAs vapor phase epitaxy (3), resulting in higher crystal quality at a lower growth temperature. Photochemical processes allow the possibility that each elemental process can be individually controlled among the competitive processes by using a specific wavelength.

© 1991 Optical Society of America