Abstract

Molecular beam epitaxy (MBE) growth on III-V(100) substrates is a very Comolex process as it involves 16 atoms per unit cell for each bilayer cycle. This relatively large unit cell leads to a truly astronomical number of possible intermediate steos. It is the purpose of this work to suggest a detailed mechanism that may be formally characterized by four major intermediate stages that are typified by staple surface structures having both surface dimers (as initially proposed by A. Y. Cho (1) ) and dimer vacancies. These stages occur at the chemisorption of 0.25, 0.5, 0.75 and 1.0 of a monolayer of Ga during the growth cycle.

© 1987 Optical Society of America