Abstract
In general photochemical (drying etching) process of thin films based on (UV) laser-initiated chemistry is difficult to investigate both mechanistically and kinetically. Some of the most important questions are concerned with the photo-formation of the reactive species and their (reactive) chemical interaction with the surface. The UV-laser assisted etching of SiO2 from photolysis of CH2 CHF is quite attractive for mechanistic studies of the etching process because of the relative simple (in-situ) application of IR (time-resolved) fluorescence and absorption techniques to monitor both the HF etchant and the SiF4 products within the gas-surface system. The strong oscillator and absorption strength of the HF molecules makes it possible to monitor its photo-production and follow the subsequent etching reaction with the SiO2 surface. Moreover, high resolution and sensitive diode laser absorption probes can be used to investigate the surface products (SiF4, SiF3, SiF2 and SiF) in the gas phase.
© 1985 Optical Society of America
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