Abstract

In order to characterise new materials being exploited for development of newer devices, in some of the cases, the materials are prepared in the form of thin films or wafers. In order to characterise thin films or wafers of the materials, a simple method has been deviced. In this method reflectance of the samples is measured at nearly normal incidence on a home made reflectometer. Also the optical rotation of incident light beam on reflection from the sample at nearly 45 deg. is measured on home made polarimeter. With the help of a graph drawn between reflectance and optical rotation, if value of reflectance of a sample can be measured, the value of its optical rotation can be approximated and vicei-versa. The main advantage of the method is that the samples of diffused nature whose reflectance cannot be measured, it can be characterised with the polarimeter. The methods are non-destructive.

© 2002 Optical Society of America