Abstract

Amorphous hydrogenated germanium (a-Ge:H) was deposited using an ArF excimer laser (193 nm) and Ge₂H₆ as source gas in parallel configuration. The dependence of the film properties on the deposition parameters such as substrate temperature, laser power, digermane partial pressure and total pressure was fully characterized. The results obtained for the Urbach energy, hydrogen content, Tauc gap, density, E-modulus as well as dark and photoconductivity show that high quality material can be deposited by ArF laser CVD.

© 1996 Optical Society of America