Monolayer MoS2 Phototransistors using Ferroelectric Hf0.5Zr0.5O2 Dielectrics

Roda Nur; Kasidit Toprasertpong; Shinichi Takagi; Mitsuru Takenaka

doi:10.1364/JSAP.2021.10a_N305_3

JSAP-OSA Joint Symposia 2021 Abstracts
OSA Technical Digest (Optica Publishing Group, 2021),
paper 10a_N305_3
•https://doi.org/10.1364/JSAP.2021.10a_N305_3

Monolayer MoS2 Phototransistors using Ferroelectric Hf0.5Zr0.5O2 Dielectrics

Roda Nur, Kasidit Toprasertpong, Shinichi Takagi, and Mitsuru Takenaka

JSAP-OSA Joint Symposia 2021

Nagoya Japan
26–26 August 2021
ISBN: 978-4-86348-785-7

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Nanocarbon and 2D Materials (N2DM)

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R. Nur, K. Toprasertpong, S. Takagi, and M. Takenaka, "Monolayer MoS2 Phototransistors using Ferroelectric Hf0.5Zr0.5O2 Dielectrics," in JSAP-OSA Joint Symposia 2021 Abstracts, OSA Technical Digest (Optica Publishing Group, 2021), paper 10a_N305_3.

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Abstract

Atomically thin 2D materials such as MoS₂ exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors, light emitting diodes, and opto-valleytronic devices.

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