Abstract

Optical excitation of a semiconductor quantum well leads to a built up of coherent polarization as well as charge carrier densities in the valence and conduction band. Ultrashort (100 fs) and spatially localized (1 µm) optical pulses make it possible to study the preparation, propagation and scattering of carrier wavepackets. Recent work has investigated the electronic transport phenomena for above bandedge excitation under the influence of phonons and interface roughness [1] and describes microscopically the temporally resolved cross-over from the ballistic to the diffusive transport regime.

© 2000 IEEE