Abstract
The nonequilibrium dynamics of photoexcited semiconductors occurs on ultrafast time scales and is initially governed by coherent polarizations. Impulsive excitation of a coherent superposition of heavy- (HH) and light- hole (LH) states leads to pronounced beating phenomena, which were first found for excitons in quantum wells1 and also recently in the free-carrier continuum of bulk gallium arsenide (GaAs).2 At the absorption edge of GaAs, femtosecond pump-probe experiments are determined by both excitonic and free- carrier contributions. A direct experimental separation of the two components is still missing but mandatory for a complete interpretation of pump-probe data.
© 1998 Optical Society of America
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