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  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper WeD3

Spatial Carrier Transfer After Intersubband Excitation in n-Doped Multiple Quantum Well Structures

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Abstract

Scattering of carriers in higher subbands to lower states is of fundamental importance for the development of semiconductor devices based on heterostructures. In particular, the corresponding time constants determine the sensitvity of quantum well infrared photodetectors and they are of relevance in the discussion of infrared laser emission from intersubband transitions.

© 1992 IQEC

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