Abstract
In photorefractive semiconductors the gain coefficient with the sample thickness d and the pump and signal beam intensities Ip, Is can be enhanced by an externally applied electrical field. Whereas this results in a loss of the optimal π/2 phase shift between the light interference pattern and the refractive index grating, a recently detected intensity-temperature resonance in InP:Fe restores this optimal phase shift. This resulted in Two Wave Mixing (TWM) gain coefficients, of 11.4 cm-1 at 1064 nm in InP:Fe.[1]
© 1992 IQEC
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