Ballistic Electrons in Semiconductor Confined Structures

S. Tarucha; Y. Horikoshi; T. Saku; Y. Hirazama

XVIII International Quantum Electronics Conference
Technical Digest Series (Optica Publishing Group, 1992),
paper TuK1

Ballistic Electrons in Semiconductor Confined Structures

S. Tarucha, Y. Horikoshi, T. Saku, and Y. Hirazama

International Quantum Electronics Conference 1992

Vienna Austria
14–19 June 1992
ISBN:

From the session
Transport and Tunneling (TuK)

Open Access

Get PDF
Email
Share
Get Citation
Copy Citation Text
S. Tarucha, Y. Horikoshi, T. Saku, and Y. Hirazama, "Ballistic Electrons in Semiconductor Confined Structures," in XVIII International Quantum Electronics Conference, Technical Digest Series (Optica Publishing Group, 1992), paper TuK1.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

Ballistic electron transport high mobility (1×10⁷ cm²/Vs) semiconductor heterostructures is presented. We show long-distance ballistic transport over 210 pm, and size-independent conductance of long electron channels, which is defined by the classical limit of quanized conductance.

PDF Article

More Like This

Semiconductor Ballistic Electron Reflection, Refraction, Interference, and Diffraction Effects: Modeling and Quantum Device Applications

T. K. Gaylord, G. N. Henderson, E. N. Glytsis, D. W. Wilson, P. N. First, and D. B. Walker
TuE5 Integrated Photonics Research (IPR) 1992

Time-resoived observation of ballistic electrons in a quantum well

T. B. Norris, W. Sha, and J.-K. Rhee
QWB1 Quantum Electronics and Laser Science Conference (CLEO:FS) 1992

Ballistic electron diffractive switches: design and performance analysis

Gregory N. Henderson, Thomas K. Gaylord, and Elias N. Glytsis
MD2 Integrated Photonics Research (IPR) 1992

Previous Article Next Article