Abstract
The key parameters characterizing the dynamics of carriers in semiconductors are the plasma frequency ωp and the carrier damping rate Γ = 1/τ, where τ is the carrier collision time. Because ωp and Γ characteristically have THz values, measurements should be performed in the difficult THz frequency range. In previous measurements microwaves have been used for frequencies below 0.1 THz and far-infrared spectroscopy has been applied to very high frequencies where the carrier response is less important. Consequently, it remains important to perform measurements spanning the values of the key parameters. This is now possible.
© 1992 IQEC
PDF ArticleMore Like This
D. Grischkowsky
FrN5 International Quantum Electronics Conference (IQEC) 1992
D. Grischkowsky
TuC2 Nonlinear Optics (NLO) 1992
MARTIN VAN EXTER and DANIEL R. CRISCHKOWSKY
JTUD3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990