Abstract

The investigations carried out during the last 10 years have revealed that hot carrier effects play an essential role in picosecond and even in subpicosecond dynamics of cemiconductor lasers, amplifiers and superluminescent diodes^[1−3]. However to the best of our knowledge there was no attempt to compare experimental results obtained on different devices, though these results can differ strongly and sometimes contradict each other. This situation can be partially explained by the fact that theoretical investigations of hot carrier effects in semiconductor lasers and amplifiers are at the very beginning^[4−5].

© 1992 IQEC