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Conferences > IQEC > 1992 > MoP > MoP4
  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper MoP4

Temperature Sensing Device Using Thermally Induced Optical Bistability in GaAs/(AlGa)As Multiple Quantum Wells

U. Zimmermann, K.-H. Schlaad, C. Klingshirn, G. Weimann, and H. Bartelt

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Abstract

GaAs/(AlGa)As multiple quantum well structures (MQWS) exhibit a steep excitonic absorption edge in the near infrared spectral region even at room temperature.[1] With rising temperature, this absorption edge shifts strongly enough to the red to lead to a sharp increase in the absorption of photon energies just below the absorption edge of the quantum wells. This makes these structures attractive candidates for observing thermally induced optical bistability (TOB) with moderate pumping powers.

© 1992 IQEC

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