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Conferences > IQEC > 1992 > MoE > MoE4
  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper MoE4

Measurement of Carrier Capture Time of Quantum-Well Structures by the Leakage Emission Increase above Laser Threshold

H. Hirayama, J. Yoshida, and M. Asada

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Abstract

Carrier capture time of quantum-well lasers is one of the important parameters which determine the device efficiency, threshold current, modulation characteristics[1], etc. Usually the carrier capture time has been estimated by the time-resolved luminescence spectroscopy.[2] In this work, we estimated the capture time by measuring the increase of emission from the optical confinement layers above the laser threshold. By this method, effective capture time and its well number dependence were obtained.

© 1992 IQEC

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