Abstract

For the fabrication of complex integrated optical devices such as a coherent optical receiver the separate investigation of its components like directional couplers, S-bends and Y-branches is a necessity. A promising material for its realization is silicon since it exhibits an optical absorption of below 0.1cm⁻¹ in the infrared regime (λ > 1.2μm) provided that waveguides with equally low losses can be produced. The goal is achieved by indiffusing Ge from a stripe containing an alloy of germanium and silicon as proposed in /1,2/ thus minimizing losses due to free carriers. Silicon also offers the potential of being the most developed material for electronic applications making it suitable for an opto-electronic integration.

© 1992 Optical Society of America