Abstract

An optical switch array is a very important photonic component for future optical information systems. Several non-blocking 4x4 optical switching arrays made of LiNbO₃ have been reported^1-3). These electrooptic devices exhibit relatively low crosstalk and low insertion loss. However, their drawbacks include device length larger than 60 mm, strong polarization dependence and inability to monolithically integrate other active devices such as semiconductor lasers and detectors. It is well known that the carrier injection into a semiconductor induces a large polarization independent refractive index change. We have been studying InP based optical switch arrays which operation relies on such an effect.^4,5) The results obtained so far will be summarized during the talk. Here, we are presenting only our latest results.⁶⁾

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