Abstract
A variety of mechanisms in semiconductor systems may contribute to the development of an electro-optic effect in waveguide structures,1 including the bulk linear electro-optic effect, free-carrier effects, and band-edge effects. The inclusion of quantum wells in the active region may also introduce contributions via the quantum-confined Stark effect2 (QCSE) and a new effect recently predicted3 in a system of asymmetric coupled quantum wells. In this paper, we report the investigation of these mechanisms in GaAs-GaAIAs single-mode planar waveguides in the low-loss region below the bandgap.
© 1988 Optical Society of America
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