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Conferences > IGWO > 1986 > THAA > THAA5

GaAs- and InP-based optical waveguides for the 10.6-μm wavelength

D. Delacourt, J. Chevrier, A. De Bouard, J. P. Hirtz, M. A. Poisson, M. Razeghi, and Michel Papuchon

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Abstract

The recent progress achieved in III–V compound vapor phase epitaxy and particularly the development of the MOCVD method, give new possibilities for passive and active efficient waveguiding devices for the 10.6-μm wavelength. We present results for two different planar structures: a low-drive voltage phase modulator and a low-loss waveguide.

© 1986 Optical Society of America

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