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1.3μm Avalanche Photodiodes Formed by Waveguiding in GexSi1-x, Strained Layer Superlattice

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Abstract

Avalanche photodetectors are important components in the implementation of high bit-rate optical fiber communications. Ga0.47In0.53 As and Ge avalanche photodiodes considered for optical communications systems operating near 1.3μm suffer from an excess noise factor near the theoretical maximum. At the other extreme, Si avalanche photodetectors (APDs) have an excess factor near the absolute minimum. Unfortunately, the optical response of Si APDs is limited-to shorter wavelength, far below 1.3-1.5μm optimum spectral region for optical fiber transmission.

© 1986 Optical Society of America

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