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Conferences > IGWO > 1984 > ThA > ThA4

Ga0.47In0.53As/InP Photoconductive Detector with High Receiver Sensitivities

C. Y. Chen, B. L. Kasper, and H. M. Cox

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Abstract

We report a high-sensitivity Ga0.47In0.53As photoconductive detector (PCD) prepared by trichloride vapor phase epitaxy. This detector shows a receiver sensitivity better than that of a Ga0.47In0.53As pin photodiode at 1Gb/s. This study indicates that photoconductive detectors are promising candidates for applications in high data rate, long wavelength lightwave communications.

© 1984 Optical Society of America

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