Er:YAG microchip for lasing in spectral range 2.94 µm and gain switching generation

Richard Švejkar; Jan Šulc; Helena Jelínková

doi:10.1364/EUVXRAY.2020.JW1A.25

OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS)
OSA Technical Digest (Optica Publishing Group, 2020),
paper JW1A.25
•https://doi.org/10.1364/EUVXRAY.2020.JW1A.25

Er:YAG microchip for lasing in spectral range 2.94 µm and gain switching generation

Richard Švejkar, Jan Šulc, and Helena Jelínková

Compact EUV & X-ray Light Sources 2020

Washington, DC United States
16–20 November 2020
ISBN: 978-1-943580-73-6

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Joint Poster Session II (JW1A)

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R. Švejkar, J. Šulc, and H. Jelínková, "Er:YAG microchip for lasing in spectral range 2.94 µm and gain switching generation," in OSA High-brightness Sources and Light-driven Interactions Congress 2020 (EUVXRAY, HILAS, MICS), L. Assoufid, P. Naulleau, M. Couprie, T. Ishikawa, J. Rocca, C. Haefner, G. Sansone, T. Metzger, F. Quéré, M. Ebrahim-Zadeh, A. Helmy, F. Laurell, and G. Leo, eds., OSA Technical Digest (Optica Publishing Group, 2020), paper JW1A.25.

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Abstract

Highly doped Er:YAG microchip was prepared to make laser resonator compact and generate short pulses in gain switching regime. Pulse duration 306 ns with peak power 7 W and repetition rate 400 Hz were reached.

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