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  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1994),
  • paper QWD75

Laser-induced diffusion of ion defects in semiconductors

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Abstract

It is known1,2 that atomic particles may migrate by coherent tunneling between its localized states in host lattices at low temperature, whereas at higher temperature phonon interactions promote a range of other migration paths ranging from incoherent tunneling to thermally excited over-the-barrier jumps. As a rule, quantum tunneling effects are unimportant in semiconductors at temperatures where diffusion measurements are practicable and thermal diffusion of impurities is considered.

© 1994 IEEE

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