Abstract
The injected carriers due to above band gap femtosecond excitation of a biased Schottky barrier (SB), will cause a collapse of the SB-field due to a carrier sweep-out. This effect can directly be probed by a novel interface technique, optical second-harmonic generation (SHG). The reflected SHG-field from a SB formed by a thin gold layer on top of GaAs(100), is related to the incident field and the de SB-field via interface and bulk nonlinear susceptibility of tensors. Experimentally, the two contributions can be separated, as the interface contribution is isotropic and depending on , whereas the bulk contribution is anisotropic and should not depend on .
© 1994 IEEE
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