Abstract

We have recently been evaluating the suitability of excimer lasers, particularly XeCl lasers (λ=308 nm), for the processing of semiconductor devices. Thus far, our attention has been focused primarily on establishing the laser annealing characteristics of XeCl lasers and on application of these lasers to silicon solar cell fabrication. Extensive comparisons of the quality of annealing of ion-implanted silicon obtained with XeCl and ruby lasers have been made. In this talk, the most significant aspects of this work will be reviewed and some recently obtained results described.

© 1983 Optical Society of America