Abstract

This paper presents the results of investigations of microwave and millimeter wave integrated circuits for low noise transistor amplifiers. We propose a technology of local film deposition for production of low loss integrated circuits. This technology gives the opportunity to realize the high potential parameters of modern field-effect transistors better than fin-line, microstrip and other known microwave circuits give. An original construction of low noise transistor amplifier is described. It is achieved extremely low noise figure due to concentration of electromagnetic field in that region, where lossy dielectric is absent.

© 1995 Optical Society of America