Abstract
Si-containing diamond-like carbon film was deposited by rf plasma CVD at 300 °C with gases of CH4, Ar and SiH4. The coatings were characterized using Raman spectroscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and micro Vickers indentor. The smooth coatings the C/C+Si above 78 at.% and the knoop hardness 1500kg/mm2 measured with a load of 50gf were obtained.
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