Abstract

The effects of growing thin cobalt films on natural type IIb diamond (100) substrates were investigated by means of ultraviolet photoemission spectroscopy (UPS). Prior to deposition the diamond samples were annealed to 1150°C in UHV resulting in a positive electron affinity surface. Upon deposition of 2Å of Cobalt a negative electron affinity (NEA) was observed and a Schottky barrier height of 0.35 eV was measured by means of UPS. The presence of a cobalt layer was confirmed employing in-situ Auger electron spectroscopy (AES). As evidenced by atomic force microscopy (AFM) uniform Co films were deposited replicating the underlying diamond substrates.